| 元件型号: | 70P265L65BYGI |
| 产品名称: | 70P265L65BYGI Memory |
| 商户特定标识符: | 70P265L65BYGI |
| 类别: | Integrated Circuits (ICs) > Memory |
| 品牌: | IDT, Integrated Device Technology Inc |
| 描述: | IC SRAM 256KBIT 65NS 100FBGA |
| 系列: | - |
| 包装: | Tray |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 256Kb (16K x 16) |
| 时钟频率: | - |
| 写入周期时间 - 字、页: | 65ns |
| 存取时间: | 65ns |
| 内存接口: | Parallel |
| 电压 - 电源: | 1.7 V ~ 1.9 V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包装/箱: | 100-TFBGA |
| 供应商设备包: | 100-CABGA (6x6) |
元件型号
品牌
生产日期
数量
70P265L65BYGI IDT, Integrated Device Technology Inc 23+
IDT, Integrated Device Technology Inc
23+
100000
USD 0
70P265L65BYGI IDT, Integrated Device Technology Inc 21+
IDT, Integrated Device Technology Inc
21+
15000
USD 0
70P265L65BYGI Renesas Electronics America Inc 23+
Renesas Electronics America Inc
23+
23560
USD 0
70P265L65BYGI IDT, Integrated Device Technology Inc 23+
IDT, Integrated Device Technology Inc
23+
100000
USD 0
70P265L65BYGI IDT, Integrated Device Technology Inc 21+
IDT, Integrated Device Technology Inc
21+
15000
USD 0
70P265L65BYGI Renesas Electronics America Inc 23+
Renesas Electronics America Inc
23+
23560
USD 0
| 
