元件型号: | 71V416S10BEG |
产品名称: | 71V416S10BEG Memory |
商户特定标识符: | 71V416S10BEG |
类别: | Integrated Circuits (ICs) > Memory |
品牌: | IDT, Integrated Device Technology Inc |
描述: | IC SRAM 4MBIT 10NS 48CABGA |
系列: | - |
包装: | Tray |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
时钟频率: | - |
写入周期时间 - 字、页: | 10ns |
存取时间: | 10ns |
内存接口: | Parallel |
电压 - 电源: | 3 V ~ 3.6 V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包装/箱: | 48-TFBGA |
供应商设备包: | 48-CABGA (9x9) |
元件型号
品牌
生产日期
数量
71V416S10BEG IDT, Integrated Device Technology Inc 23+
IDT, Integrated Device Technology Inc
23+
100000
USD 0
71V416S10BEG IDT, Integrated Device Technology Inc 21+
IDT, Integrated Device Technology Inc
21+
16000
USD 0
71V416S10BEG Renesas Electronics 2022
Renesas Electronics
2022
346000
USD 0
71V416S10BEG IDT, Integrated Device Technology Inc 23+
IDT, Integrated Device Technology Inc
23+
100000
USD 0
71V416S10BEG IDT, Integrated Device Technology Inc 21+
IDT, Integrated Device Technology Inc
21+
16000
USD 0
71V416S10BEG Renesas Electronics 2022
Renesas Electronics
2022
346000
USD 0