| 元件型号: | BSC052N03S |
| 产品名称: | BSC052N03S Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | BSC052N03S |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Infineon Technologies |
| 描述: | MOSFET N-CH 30V 80A TDSON-8 |
| 系列: | OptiMOS |
| 包装: | Tape & Reel (TR) |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 30V |
| 电流 - 连续漏极 (Id) @ 25°C: | 18A (Ta), 80A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 2V @ 40µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 22nC @ 5V |
| 输入电容 (Ciss)（最大值）@Vds: | 2820pF @ 15V |
| Vgs（最大）: | - |
| 场效应管特性: | - |
| 功耗（最大）: | 2.8W (Ta), 54W (Tc) |
| Rds On（最大）@Id、Vgs: | 5.2 mOhm @ 50A, 10V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TDSON-8 |
| 包装/箱: | 8-PowerTDFN |
元件型号
品牌
生产日期
数量
BSC052N03S G INFINEON 22+
INFINEON
22+
32000
USD 0
BSC052N03S G INFINEON 23+
INFINEON
23+
5708
USD 0
BSC052N03S Infineon 23+
Infineon
23+
4305
USD 0
BSC052N03S
INFINEON
INFINEON
374
USD 0
BSC052N03S G Infineon Technologies 21+
Infineon Technologies
21+
16000
USD 0
BSC052N03S G INFINEON 22+
INFINEON
22+
32000
USD 0
BSC052N03S G INFINEON 23+
INFINEON
23+
5708
USD 0
BSC052N03S Infineon 23+
Infineon
23+
4305
USD 0
BSC052N03S
INFINEON
INFINEON
374
USD 0
BSC052N03S G Infineon Technologies 21+
Infineon Technologies
21+
16000
USD 0
| 
