| 元件型号: | BSM50GD120DN2G |
| 产品名称: | BSM50GD120DN2G Transistors - IGBTs - Modules |
| 商户特定标识符: | BSM50GD120DN2G |
| 类别: | Discrete Semiconductor Products > Transistors - IGBTs - Modules |
| 品牌: | Infineon Technologies Industrial Power and Controls Americas |
| 描述: | IGBT BSM50GD120DN2GBOSA1 |
| 系列: | - |
| IGBT类型: | - |
| 配置: | Full Bridge |
| 电压 - 集电极发射极击穿（最大）: | 1200V |
| 集电极电流 (Ic)（最大）: | 78A |
| 功率 - 最大: | 400W |
| Vce(on)（最大值）@Vge, Ic: | 3.7V @ 15V, 50A |
| 电流 - 集电极截止（最大）: | - |
| 输入电容 (Cies) @ Vce: | 33nF @ 25V |
| 输入: | Standard |
| NTC热敏电阻: | No |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 包装/箱: | Module |
| 供应商设备包: | Module |
元件型号
品牌
生产日期
数量
BSM50GD120DN2G
EUPEC
EUPEC
80
USD 0
BSM50GD120DN2G INFINEON 2020+
INFINEON
2020+
50
USD 0
BSM50GD120DN2G original new 21+
original new
21+
6038
USD 0
BSM50GD120DN2G
2500
USD 0
BSM50GD120DN2G
EUPEC
EUPEC
80
USD 0
BSM50GD120DN2G INFINEON 2020+
INFINEON
2020+
50
USD 0
BSM50GD120DN2G original new 21+
original new
21+
6038
USD 0
BSM50GD120DN2G
2500
USD 0
| 
