| 元件型号: | DMN10H099SFG7 |
| 产品名称: | DMN10H099SFG7 Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | DMN10H099SFG7 |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Diodes Incorporated |
| 描述: | MOSFET N-CH 100V 4.2A PWRDI3333 |
| 系列: | - |
| 包装: | Cut Tape (CT) |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 100V |
| 电流 - 连续漏极 (Id) @ 25°C: | 4.2A (Ta) |
| 驱动电压（最大导通电阻、最小导通电阻）: | 6V, 10V |
| Vgs(th)（最大值）@Id: | 3V @ 250µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 25.2nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 1172pF @ 50V |
| Vgs（最大）: | ±20V |
| 场效应管特性: | - |
| 功耗（最大）: | 980mW (Ta) |
| Rds On（最大）@Id、Vgs: | 80 mOhm @ 3.3A, 10V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerDI3333-8 |
| 包装/箱: | 8-PowerWDFN |
元件型号
品牌
生产日期
数量
单价 (USD)
数量
元件型号
品牌
生产日期
数量
DMN10H099SFG-7 DIODES 21+
DIODES
21+
7165
USD 0
DMN10H099SFG-7 DIODES 21+
DIODES
21+
50000
USD 0
DMN10H099SFG-7 Diodes Incorporated 21+
Diodes Incorporated
21+
16000
USD 0
DMN10H099SFG-7 DIODES 21+
DIODES
21+
7165
USD 0
DMN10H099SFG-7 DIODES 21+
DIODES
21+
50000
USD 0
DMN10H099SFG-7 Diodes Incorporated 21+
Diodes Incorporated
21+
16000
USD 0
| 
