| 元件型号: | FDD4N60NZ |
| 产品名称: | FDD4N60NZ Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | FDD4N60NZ |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Fairchild/ON Semiconductor |
| 描述: | MOSFET N CH 600V 3.4A DPAK |
| 系列: | UniFET-II |
| 包装: | Cut Tape (CT) |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 600V |
| 电流 - 连续漏极 (Id) @ 25°C: | 3.4A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | 10V |
| Vgs(th)（最大值）@Id: | 5V @ 250µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 10.8nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 510pF @ 25V |
| Vgs（最大）: | ±25V |
| 场效应管特性: | - |
| 功耗（最大）: | 114W (Tc) |
| Rds On（最大）@Id、Vgs: | 2.5 Ohm @ 1.7A, 10V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | TO-252, (D-Pak) |
| 包装/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
元件型号
品牌
生产日期
数量
FDD4N60NZ ON 2020+
ON
2020+
600
USD 0
FDD4N60NZ ON 20+
ON
20+
2500
USD 0
FDD4N60NZ onsemi 22+
onsemi
22+
35800
USD 0
FDD4N60NZ FAIRCHILD 20+
FAIRCHILD
20+
12500
USD 0
FDD4N60NZ FAIRCHILD
FAIRCHILD
55001
USD 0
FDD4N60NZ ON 2020+
ON
2020+
600
USD 0
FDD4N60NZ ON 20+
ON
20+
2500
USD 0
FDD4N60NZ onsemi 22+
onsemi
22+
35800
USD 0
FDD4N60NZ FAIRCHILD 20+
FAIRCHILD
20+
12500
USD 0
FDD4N60NZ FAIRCHILD
FAIRCHILD
55001
USD 0
| 
