| 元件型号: | IPB030N08N3 |
| 产品名称: | IPB030N08N3 Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | IPB030N08N3 |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Infineon Technologies |
| 描述: | MOSFET N-CH 80V 160A TO263-7 |
| 系列: | OptiMOS |
| 包装: | Tape & Reel (TR) |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 80V |
| 电流 - 连续漏极 (Id) @ 25°C: | 160A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | 6V, 10V |
| Vgs(th)（最大值）@Id: | 3.5V @ 155µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 117nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 8110pF @ 40V |
| Vgs（最大）: | ±20V |
| 场效应管特性: | - |
| 功耗（最大）: | 214W (Tc) |
| Rds On（最大）@Id、Vgs: | 3 mOhm @ 100A, 10V |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO263-7 |
| 包装/箱: | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
元件型号
品牌
生产日期
数量
IPB030N08N3 G INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IPB030N08N3 G INFINEON
INFINEON
1000
USD 0
IPB030N08N3 G Infineon Technologies 21+
Infineon Technologies
21+
16000
USD 0
IPB030N08N3 G INFINEON TECHNOLOGIES AG 22+
INFINEON TECHNOLOGIES AG
22+
3000
USD 0
IPB030N08N3 G INFINEON
INFINEON
1000
USD 0
IPB030N08N3 G Infineon Technologies 21+
Infineon Technologies
21+
16000
USD 0
| 
