元件型号: | IPD090N03LGATMA1 |
产品名称: | IPD090N03LGATMA1 Transistors - FETs, MOSFETs - Single |
商户特定标识符: | IPD090N03LGATMA1 |
类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
品牌: | Infineon Technologies |
描述: | MOSFET N-CH 30V 40A TO252-3 |
系列: | OptiMOS |
包装: | Tape & Reel (TR) |
场效应管类型: | N-Channel |
技术: | MOSFET (Metal Oxide) |
漏源电压 (Vdss): | 30V |
电流 - 连续漏极 (Id) @ 25°C: | 40A (Tc) |
驱动电压(最大导通电阻、最小导通电阻): | 4.5V, 10V |
Vgs(th)(最大值)@Id: | 2.2V @ 250µA |
栅极电荷 (Qg)(最大值)@Vgs: | 15nC @ 10V |
输入电容 (Ciss)(最大值)@Vds: | 1600pF @ 15V |
Vgs(最大): | ±20V |
场效应管特性: | - |
功耗(最大): | 42W (Tc) |
Rds On(最大)@Id、Vgs: | 9 mOhm @ 30A, 10V |
工作温度: | -55°C ~ 175°C (TJ) |
安装类型: | Surface Mount |
供应商设备包: | PG-TO252-3 |
包装/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
元件型号
品牌
生产日期
数量
IPD090N03LGATMA1 Infineon 22+
Infineon
22+
2500
USD 0
IPD090N03LGATMA1 TI
TI
1000
USD 0
IPD090N03LGATMA1 Infineon 21+
Infineon
21+
30000
USD 0
IPD090N03LGATMA1 Infineon 23+
Infineon
23+
2000
USD 0
IPD090N03LGATMA1 Infineon Technologies
Infineon Technologies
10000
USD 0
IPD090N03LGATMA1 Infineon 22+
Infineon
22+
2500
USD 0
IPD090N03LGATMA1 TI
TI
1000
USD 0
IPD090N03LGATMA1 Infineon 21+
Infineon
21+
30000
USD 0
IPD090N03LGATMA1 Infineon 23+
Infineon
23+
2000
USD 0
IPD090N03LGATMA1 Infineon Technologies
Infineon Technologies
10000
USD 0