| 元件型号: | IPI26CNE8N |
| 产品名称: | IPI26CNE8N Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | IPI26CNE8N |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Infineon Technologies |
| 描述: | MOSFET N-CH 85V 35A TO262-3 |
| 系列: | OptiMOS |
| 包装: | Tube |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 85V |
| 电流 - 连续漏极 (Id) @ 25°C: | 35A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 4V @ 39µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 31nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 2070pF @ 40V |
| Vgs（最大）: | - |
| 场效应管特性: | - |
| 功耗（最大）: | 71W (Tc) |
| Rds On（最大）@Id、Vgs: | 26 mOhm @ 35A, 10V |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | PG-TO262-3 |
| 包装/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
元件型号
品牌
生产日期
数量
IPI26CNE8N G INFINEON 22+
INFINEON
22+
32000
USD 0
IPI26CNE8N G Infineon Technologies
Infineon Technologies
1000
USD 0
IPI26CNE8N G INFINEON 2022+
INFINEON
2022+
75402
USD 0
IPI26CNE8N G infineon 2021+
infineon
2021+
5000
USD 0
IPI26CNE8N G Infineon Technologies 21+
Infineon Technologies
21+
81630
USD 0
IPI26CNE8N G INFINEON 22+
INFINEON
22+
32000
USD 0
IPI26CNE8N G Infineon Technologies
Infineon Technologies
1000
USD 0
IPI26CNE8N G INFINEON 2022+
INFINEON
2022+
75402
USD 0
IPI26CNE8N G infineon 2021+
infineon
2021+
5000
USD 0
IPI26CNE8N G Infineon Technologies 21+
Infineon Technologies
21+
81630
USD 0
| 
