| 元件型号: | IRF630NSTRR |
| 产品名称: | IRF630NSTRR Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | IRF630NSTRR |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Infineon Technologies |
| 描述: | MOSFET N-CH 200V 9.3A D2PAK |
| 系列: | HEXFET |
| 包装: | Tape & Reel (TR) |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 200V |
| 电流 - 连续漏极 (Id) @ 25°C: | 9.3A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 4V @ 250µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 35nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 575pF @ 25V |
| Vgs（最大）: | - |
| 场效应管特性: | - |
| 功耗（最大）: | 82W (Tc) |
| Rds On（最大）@Id、Vgs: | 300 mOhm @ 5.4A, 10V |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包装/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
元件型号
品牌
生产日期
数量
IRF630NSTRR INFINEON 22+
INFINEON
22+
32000
USD 0
IRF630NSTRR
Infineon Technologies
Infineon Technologies
50
USD 0
IRF630NSTRR IR 01+
IR
01+
39999
USD 0
IRF630NSTRR Infineon Technologies 21+
Infineon Technologies
21+
16000
USD 0
IRF630NSTRR INFINEON 22+
INFINEON
22+
32000
USD 0
IRF630NSTRR
Infineon Technologies
Infineon Technologies
50
USD 0
IRF630NSTRR IR 01+
IR
01+
39999
USD 0
IRF630NSTRR Infineon Technologies 21+
Infineon Technologies
21+
16000
USD 0
| 
