| 元件型号: | IRF6711STR1PBF |
| 产品名称: | IRF6711STR1PBF Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | IRF6711STR1PBF |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Infineon Technologies |
| 描述: | MOSFET N-CH 25V 19A DIRECTFET-SQ |
| 系列: | HEXFET |
| 包装: | |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 25V |
| 电流 - 连续漏极 (Id) @ 25°C: | 19A (Ta), 84A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 2.35V @ 25µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 20nC @ 4.5V |
| 输入电容 (Ciss)（最大值）@Vds: | 1810pF @ 13V |
| Vgs（最大）: | - |
| 场效应管特性: | - |
| 功耗（最大）: | 2.2W (Ta), 42W (Tc) |
| Rds On（最大）@Id、Vgs: | 3.8 mOhm @ 19A, 10V |
| 工作温度: | -40°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | DIRECTFET,SQ |
| 包装/箱: | DirectFET,Isometric SQ |
元件型号
品牌
生产日期
数量
IRF6711STR1PBF IR
IR
16000
USD 0
IRF6711STR1PBF INFINEON 22+
INFINEON
22+
32000
USD 0
IRF6711STR1PBF Infineon Technologies 21+
Infineon Technologies
21+
16000
USD 0
IRF6711STR1PBF Infineon Technologies
Infineon Technologies
1000
USD 0
IRF6711STR1PBF IR 1145+
IR
1145+
7050
USD 0
IRF6711STR1PBF IR
IR
16000
USD 0
IRF6711STR1PBF INFINEON 22+
INFINEON
22+
32000
USD 0
IRF6711STR1PBF Infineon Technologies 21+
Infineon Technologies
21+
16000
USD 0
IRF6711STR1PBF Infineon Technologies
Infineon Technologies
1000
USD 0
IRF6711STR1PBF IR 1145+
IR
1145+
7050
USD 0
| 
