| 元件型号: | IRF7526D1PBF |
| 产品名称: | IRF7526D1PBF Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | IRF7526D1PBF |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Infineon Technologies |
| 描述: | MOSFET P-CH 30V 2A MICRO8 |
| 系列: | FETKY |
| 包装: | Tube |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 30V |
| 电流 - 连续漏极 (Id) @ 25°C: | 2A (Ta) |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 1V @ 250µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 11nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 180pF @ 25V |
| Vgs（最大）: | - |
| 场效应管特性: | Schottky Diode (Isolated) |
| 功耗（最大）: | 1.25W (Ta) |
| Rds On（最大）@Id、Vgs: | 200 mOhm @ 1.2A, 10V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | Micro8 |
| 包装/箱: | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
元件型号
品牌
生产日期
数量
IRF7526D1PBF Infineon Technologies 21+
Infineon Technologies
21+
5000
USD 0
IRF7526D1PBF INFINEON 22+
INFINEON
22+
32000
USD 0
IRF7526D1PBF Infineon Technologies
Infineon Technologies
1000
USD 0
IRF7526D1PBF Infineon Technologies 21+
Infineon Technologies
21+
5000
USD 0
IRF7526D1PBF INFINEON 22+
INFINEON
22+
32000
USD 0
IRF7526D1PBF Infineon Technologies
Infineon Technologies
1000
USD 0
| 
