| 元件型号: | IXFN26N100P |
| 产品名称: | IXFN26N100P Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | IXFN26N100P |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | IXYS |
| 描述: | MOSFET N-CH 1000V 23A SOT-227B |
| 系列: | Polar |
| 包装: | Tube |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 1000V (1kV) |
| 电流 - 连续漏极 (Id) @ 25°C: | 23A |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 6.5V @ 1mA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 197nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 11900pF @ 25V |
| Vgs（最大）: | - |
| 场效应管特性: | - |
| 功耗（最大）: | 595W (Tc) |
| Rds On（最大）@Id、Vgs: | 390 mOhm @ 13A, 10V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Chassis Mount |
| 供应商设备包: | SOT-227B |
| 包装/箱: | SOT-227-4, miniBLOC |
元件型号
品牌
生产日期
数量
IXFN26N100P IXYS 21+
IXYS
21+
16000
USD 0
IXFN26N100P
IXYS
IXYS
101
USD 0
IXFN26N100P IXYS
IXYS
1000
USD 0
IXFN26N100P IXYS 22+
IXYS
22+
5000
USD 0
IXFN26N100P IXYS 21+
IXYS
21+
81630
USD 0
IXFN26N100P IXYS 21+
IXYS
21+
16000
USD 0
IXFN26N100P
IXYS
IXYS
101
USD 0
IXFN26N100P IXYS
IXYS
1000
USD 0
IXFN26N100P IXYS 22+
IXYS
22+
5000
USD 0
IXFN26N100P IXYS 21+
IXYS
21+
81630
USD 0
| 
