| 元件型号: | MJD1121G |
| 产品名称: | MJD1121G Transistors - Bipolar (BJT) - Single |
| 商户特定标识符: | MJD1121G |
| 类别: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single |
| 品牌: | ON Semiconductor |
| 描述: | TRANS NPN DARL 100V 2A IPAK |
| 系列: | - |
| 包装: | Tube |
| 晶体管类型: | NPN - Darlington |
| 集电极电流 (Ic)（最大）: | 2A |
| 电压 - 集电极发射极击穿（最大）: | 100V |
| Vce 饱和度（最大值）@Ib、Ic: | 3V @ 40mA, 4A |
| 电流 - 集电极截止（最大）: | 20µA |
| 直流电流增益 (hFE)（最小值）@ Ic、Vce: | 1000 @ 2A, 3V |
| 功率 - 最大: | 1.75W |
| 频率-转变: | 25MHz |
| 工作温度: | -65°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 包装/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
| 供应商设备包: | I-Pak |
元件型号
品牌
生产日期
数量
MJD112-1G ON 2020+
ON
2020+
1050
USD 0
MJD112-1G ON 20+
ON
20+
38
USD 0
MJD112-1G ON 19+
ON
19+
270
USD 0
MJD112-1G
1764
USD 0
MJD112-1G ON 2020+
ON
2020+
1050
USD 0
MJD112-1G ON 20+
ON
20+
38
USD 0
MJD112-1G ON 19+
ON
19+
270
USD 0
MJD112-1G
1764
USD 0
| 
