元件型号: | NAND04GW3B2DN6E |
产品名称: | NAND04GW3B2DN6E Memory |
商户特定标识符: | NAND04GW3B2DN6E |
类别: | Integrated Circuits (ICs) > Memory |
品牌: | Micron Technology Inc. |
描述: | IC FLASH 4GBIT 48TSOP |
系列: | - |
包装: | Tray |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 4Gb (512M x 8) |
时钟频率: | - |
写入周期时间 - 字、页: | 25ns |
存取时间: | 25ns |
内存接口: | Parallel |
电压 - 电源: | 2.7 V ~ 3.6 V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包装/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP |
元件型号
品牌
生产日期
数量
NAND04GW3B2DN6E ST 16+
ST
16+
6532
USD 0
NAND04GW3B2DN6E IC 11+
11+
169
USD 0
NAND04GW3B2DN6E STMicroelectronics 23+
STMicroelectronics
23+
31496
USD 0
NAND04GW3B2DN6E ST 20+
ST
20+
3000
USD 0
NAND04GW3B2DN6E? NUMONYX? 10+
NUMONYX?
10+
8000
USD 0
NAND04GW3B2DN6E ST 16+
ST
16+
6532
USD 0
NAND04GW3B2DN6E IC 11+
11+
169
USD 0
NAND04GW3B2DN6E STMicroelectronics 23+
STMicroelectronics
23+
31496
USD 0
NAND04GW3B2DN6E ST 20+
ST
20+
3000
USD 0
NAND04GW3B2DN6E? NUMONYX? 10+
NUMONYX?
10+
8000
USD 0