| 元件型号: | NTMS10P02R2G |
| 产品名称: | NTMS10P02R2G Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | NTMS10P02R2G |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | ON Semiconductor |
| 描述: | MOSFET P-CH 20V 8.8A 8-SOIC |
| 系列: | - |
| 包装: | Tape & Reel (TR) |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 20V |
| 电流 - 连续漏极 (Id) @ 25°C: | 8.8A (Ta) |
| 驱动电压（最大导通电阻、最小导通电阻）: | 2.5V, 4.5V |
| Vgs(th)（最大值）@Id: | 1.2V @ 250µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 70nC @ 4.5V |
| 输入电容 (Ciss)（最大值）@Vds: | 3640pF @ 16V |
| Vgs（最大）: | ±12V |
| 场效应管特性: | - |
| 功耗（最大）: | 1.6W (Ta) |
| Rds On（最大）@Id、Vgs: | 14 mOhm @ 10A, 4.5V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SOIC |
| 包装/箱: | 8-SOIC (0.154", 3.90mm Width) |
元件型号
品牌
生产日期
数量
NTMS10P02R2G ON 22+
ON
22+
3155
USD 0
NTMS10P02R2G ON 2020+
ON
2020+
2000
USD 0
NTMS10P02R2G ON 19+
ON
19+
4000
USD 0
NTMS10P02R2G ON/ 2022
ON/
2022
27394
USD 0
NTMS10P02R2G ON 22+
ON
22+
3155
USD 0
NTMS10P02R2G ON 2020+
ON
2020+
2000
USD 0
NTMS10P02R2G ON 19+
ON
19+
4000
USD 0
NTMS10P02R2G ON/ 2022
ON/
2022
27394
USD 0
| 
