| 元件型号: | PDTB123ET215 |
| 产品名称: | PDTB123ET215 Transistors - Bipolar (BJT) - Single, Pre-Biased |
| 商户特定标识符: | PDTB123ET215 |
| 类别: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
| 品牌: | Nexperia USA Inc. |
| 描述: | TRANS PREBIAS PNP 250MW TO236AB |
| 系列: | - |
| 包装: | Cut Tape (CT) |
| 晶体管类型: | PNP - Pre-Biased |
| 集电极电流 (Ic)（最大）: | 500mA |
| 电压 - 集电极发射极击穿（最大）: | 50V |
| 电阻器 - 基极 (R1)（欧姆）: | 2.2k |
| 电阻器 - 发射极基极 (R2)（欧姆）: | 2.2k |
| 直流电流增益 (hFE)（最小值）@ Ic、Vce: | 40 @ 50mA, 5V |
| Vce 饱和度（最大值）@Ib、Ic: | 300mV @ 2.5mA, 50mA |
| 电流 - 集电极截止（最大）: | 100nA (ICBO) |
| 频率-转变: | - |
| 功率 - 最大: | 250mW |
| 安装类型: | Surface Mount |
| 包装/箱: | TO-236-3, SC-59, SOT-23-3 |
| 供应商设备包: | TO-236AB (SOT23) |
元件型号
品牌
生产日期
数量
PDTB123ET,215 NEXPERIA
NEXPERIA
12000
USD 0
PDTB123ET,215 NXP/
NXP/
13000
USD 0
PDTB123ET,215 22+
22+
7050
USD 0
PDTB123ET,215 NXP/ 2022
NXP/
2022
14000
USD 0
PDTB123ET,215 NXP 21+
NXP
21+
5000
USD 0
PDTB123ET,215 NEXPERIA
NEXPERIA
12000
USD 0
PDTB123ET,215 NXP/
NXP/
13000
USD 0
PDTB123ET,215 22+
22+
7050
USD 0
PDTB123ET,215 NXP/ 2022
NXP/
2022
14000
USD 0
PDTB123ET,215 NXP 21+
NXP
21+
5000
USD 0
| 
