| 元件型号: | PHT6N06T135 |
| 产品名称: | PHT6N06T135 Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | PHT6N06T135 |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | NXP USA Inc. |
| 描述: | MOSFET N-CH 55V 5.5A SOT223 |
| 系列: | TrenchMOS |
| 包装: | |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 55V |
| 电流 - 连续漏极 (Id) @ 25°C: | 5.5A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 4V @ 1mA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 5.6nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 175pF @ 25V |
| Vgs（最大）: | - |
| 场效应管特性: | - |
| 功耗（最大）: | 8.3W (Tc) |
| Rds On（最大）@Id、Vgs: | 150 mOhm @ 5A, 10V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-223 |
| 包装/箱: | TO-261-4, TO-261AA |
元件型号
品牌
生产日期
数量
PHT6N06T,135 NXP USA Inc.
NXP USA Inc.
1000
USD 0
PHT6N06T,135 original new
original new
1676
USD 0
PHT6N06T,135 NXP USA Inc. 21+
NXP USA Inc.
21+
81630
USD 0
PHT6N06T135 PH3 2022+
PH3
2022+
125125
USD 0
PHT6N06T,135 NXP USA Inc.
NXP USA Inc.
1000
USD 0
PHT6N06T,135 original new
original new
1676
USD 0
PHT6N06T,135 NXP USA Inc. 21+
NXP USA Inc.
21+
81630
USD 0
PHT6N06T135 PH3 2022+
PH3
2022+
125125
USD 0
| 
