| 元件型号: | PSMN0R930YLDX |
| 产品名称: | PSMN0R930YLDX Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | PSMN0R930YLDX |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Nexperia USA Inc. |
| 描述: | MOSFET N-CH 30V 100A 56LFPAK |
| 系列: | - |
| 包装: | |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 30V |
| 电流 - 连续漏极 (Id) @ 25°C: | 100A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | 4.5V, 10V |
| Vgs(th)（最大值）@Id: | 2.2V @ 1mA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 109nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 7668pF @ 15V |
| Vgs（最大）: | ±20V |
| 场效应管特性: | - |
| 功耗（最大）: | 349W (Tc) |
| Rds On（最大）@Id、Vgs: | 0.87 mOhm @ 25A, 10V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | LFPAK56, Power-SO8 |
| 包装/箱: | SOT-1023, 4-LFPAK |
元件型号
品牌
生产日期
数量
PSMN0R9-30YLDX NXP 2022+
NXP
2022+
12000
USD 0
PSMN0R9-30YLDX NXP 2021+
NXP
2021+
12000
USD 0
PSMN0R9-30YLDX NXP
NXP
10264
USD 0
PSMN0R9-30YLDX NEXPERIA 22+
NEXPERIA
22+
46500
USD 0
PSMN0R9-30YLDX NXP 2022+
NXP
2022+
12000
USD 0
PSMN0R9-30YLDX NXP 2021+
NXP
2021+
12000
USD 0
PSMN0R9-30YLDX NXP
NXP
10264
USD 0
PSMN0R9-30YLDX NEXPERIA 22+
NEXPERIA
22+
46500
USD 0
| 
