| 元件型号: | RN1131MFV |
| 产品名称: | RN1131MFV Transistors - Bipolar (BJT) - Single, Pre-Biased |
| 商户特定标识符: | RN1131MFV |
| 类别: | Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased |
| 品牌: | Toshiba Semiconductor and Storage |
| 描述: | TRANS PREBIAS NPN 0.15W VESM |
| 系列: | - |
| 包装: | Cut Tape (CT) |
| 晶体管类型: | NPN - Pre-Biased |
| 集电极电流 (Ic)（最大）: | 100mA |
| 电压 - 集电极发射极击穿（最大）: | 50V |
| 电阻器 - 基极 (R1)（欧姆）: | 100k |
| 电阻器 - 发射极基极 (R2)（欧姆）: | - |
| 直流电流增益 (hFE)（最小值）@ Ic、Vce: | 120 @ 1mA, 5V |
| Vce 饱和度（最大值）@Ib、Ic: | 300mV @ 500µA, 5mA |
| 电流 - 集电极截止（最大）: | 100nA (ICBO) |
| 频率-转变: | - |
| 功率 - 最大: | 150mW |
| 安装类型: | Surface Mount |
| 包装/箱: | SOT-723 |
| 供应商设备包: | VESM |
元件型号
品牌
生产日期
数量
RN1131MFV(TPL3) TOSHIBA/ 2022
TOSHIBA/
2022
59000
USD 0
RN1131MFV TOSHIBA/ 2022
TOSHIBA/
2022
50837
USD 0
RN1131MFV(TPL3) TOSHIBA
TOSHIBA
62198
USD 0
RN1131MFV(TL3,T) TOSHIBA/
TOSHIBA/
1142400
USD 0
RN1131MFV(TL3 TOSHIBA/ 22+
TOSHIBA/
22+
2908121
USD 0
RN1131MFV(TPL3) TOSHIBA/ 2022
TOSHIBA/
2022
59000
USD 0
RN1131MFV TOSHIBA/ 2022
TOSHIBA/
2022
50837
USD 0
RN1131MFV(TPL3) TOSHIBA
TOSHIBA
62198
USD 0
RN1131MFV(TL3,T) TOSHIBA/
TOSHIBA/
1142400
USD 0
RN1131MFV(TL3 TOSHIBA/ 22+
TOSHIBA/
22+
2908121
USD 0
| 
