| 元件型号: | SI4831BDYT1GE3 |
| 产品名称: | SI4831BDYT1GE3 Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | SI4831BDYT1GE3 |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Vishay Siliconix |
| 描述: | MOSFET P-CH 30V 6.6A 8-SOIC |
| 系列: | LITTLE FOOT |
| 包装: | Tape & Reel (TR) |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 30V |
| 电流 - 连续漏极 (Id) @ 25°C: | 6.6A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 3V @ 250µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 26nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 625pF @ 15V |
| Vgs（最大）: | - |
| 场效应管特性: | Schottky Diode (Isolated) |
| 功耗（最大）: | 2W (Ta), 3.3W (Tc) |
| Rds On（最大）@Id、Vgs: | 42 mOhm @ 5A, 10V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 8-SO |
| 包装/箱: | 8-SOIC (0.154", 3.90mm Width) |
元件型号
品牌
生产日期
数量
SI4831BDY-T1-GE3 VISHAY/ 22+
VISHAY/
22+
100120
USD 0
SI4831BDY-T1-GE3 Vishay Siliconix
Vishay Siliconix
1000
USD 0
SI4831BDY-T1-GE3 Vishay Siliconix 21+
Vishay Siliconix
21+
81630
USD 0
SI4831BDY-T1-GE3 Vishay 23+
Vishay
23+
30000
USD 0
SI4831BDY-T1-GE3 Vishay Siliconix 22+
Vishay Siliconix
22+
32000
USD 0
SI4831BDY-T1-GE3 VISHAY/ 22+
VISHAY/
22+
100120
USD 0
SI4831BDY-T1-GE3 Vishay Siliconix
Vishay Siliconix
1000
USD 0
SI4831BDY-T1-GE3 Vishay Siliconix 21+
Vishay Siliconix
21+
81630
USD 0
SI4831BDY-T1-GE3 Vishay 23+
Vishay
23+
30000
USD 0
SI4831BDY-T1-GE3 Vishay Siliconix 22+
Vishay Siliconix
22+
32000
USD 0
| 
