| 元件型号: | SIR404DPT1GE3 |
| 产品名称: | SIR404DPT1GE3 Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | SIR404DPT1GE3 |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Vishay Siliconix |
| 描述: | MOSFET N-CH 20V 60A PPAK SO-8 |
| 系列: | TrenchFET |
| 包装: | Cut Tape (CT) |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 20V |
| 电流 - 连续漏极 (Id) @ 25°C: | 60A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | 2.5V, 10V |
| Vgs(th)（最大值）@Id: | 1.5V @ 250µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 97nC @ 4.5V |
| 输入电容 (Ciss)（最大值）@Vds: | 8130pF @ 10V |
| Vgs（最大）: | ±12V |
| 场效应管特性: | - |
| 功耗（最大）: | 6.25W (Ta), 104W (Tc) |
| Rds On（最大）@Id、Vgs: | 1.6 mOhm @ 20A, 10V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK SO-8 |
| 包装/箱: | PowerPAK SO-8 |
元件型号
品牌
生产日期
数量
SIR404DP-T1-GE3 V1SHAY
V1SHAY
34548
USD 0
SIR404DP-T1-GE3
Vishay
Vishay
2906
USD 0
SIR404DP-T1-GE3 V1SHAY 2022
V1SHAY
2022
34548
USD 0
SIR404DP-T1-GE3 V1SHAY
V1SHAY
35548
USD 0
SIR404DP-T1-GE3 V1SHAY
V1SHAY
34548
USD 0
SIR404DP-T1-GE3
Vishay
Vishay
2906
USD 0
SIR404DP-T1-GE3 V1SHAY 2022
V1SHAY
2022
34548
USD 0
SIR404DP-T1-GE3 V1SHAY
V1SHAY
35548
USD 0
| 
