| 元件型号: | SIR418DPT1GE3 |
| 产品名称: | SIR418DPT1GE3 Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | SIR418DPT1GE3 |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Vishay Siliconix |
| 描述: | MOSFET N-CH 40V 40A PPAK SO-8 |
| 系列: | - |
| 包装: | Cut Tape (CT) |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 40V |
| 电流 - 连续漏极 (Id) @ 25°C: | 40A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | 4.5V, 10V |
| Vgs(th)（最大值）@Id: | 2.4V @ 250µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 75nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 2410pF @ 20V |
| Vgs（最大）: | ±20V |
| 场效应管特性: | - |
| 功耗（最大）: | 39W (Tc) |
| Rds On（最大）@Id、Vgs: | 5 mOhm @ 20A, 10V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK SO-8 |
| 包装/箱: | PowerPAK SO-8 |
元件型号
品牌
生产日期
数量
SIR418DP-T1-GE3
QFN-8
QFN-8
8
USD 0
SIR418DP-T1-GE3 VISHAY/ 22+
VISHAY/
22+
16673
USD 0
SIR418DP-T1-GE3 Vishay
Vishay
8543
USD 0
SIR418DP-T1-GE3 VISHAY/ 2022
VISHAY/
2022
15553
USD 0
SIR418DP-T1-GE3 VISHAY 2022+
VISHAY
2022+
31500
USD 0
SIR418DP-T1-GE3
QFN-8
QFN-8
8
USD 0
SIR418DP-T1-GE3 VISHAY/ 22+
VISHAY/
22+
16673
USD 0
SIR418DP-T1-GE3 Vishay
Vishay
8543
USD 0
SIR418DP-T1-GE3 VISHAY/ 2022
VISHAY/
2022
15553
USD 0
SIR418DP-T1-GE3 VISHAY 2022+
VISHAY
2022+
31500
USD 0
| 
