| 元件型号: | TK10Q60WS1VQ |
| 产品名称: | TK10Q60WS1VQ Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | TK10Q60WS1VQ |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Toshiba Semiconductor and Storage |
| 描述: | MOSFET N-CH 600V 9.7A IPAK |
| 系列: | DTMOSIV |
| 包装: | Tube |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 600V |
| 电流 - 连续漏极 (Id) @ 25°C: | 9.7A (Ta) |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 3.7V @ 500µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 20nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 700pF @ 300V |
| Vgs（最大）: | - |
| 场效应管特性: | - |
| 功耗（最大）: | 80W (Tc) |
| Rds On（最大）@Id、Vgs: | 430 mOhm @ 4.9A, 10V |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | I-Pak |
| 包装/箱: | TO-251-3 Stub Leads, IPak |
元件型号
品牌
生产日期
数量
TK10Q60WS1VQ TOSHIBA
TOSHIBA
11020
USD 0
TK10Q60WS1VQ TOSHIBA 2022
TOSHIBA
2022
11020
USD 0
TK10Q60W,S1VQ Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
18000
USD 0
TK10Q60WS1VQ TOSHIBA 1317+
TOSHIBA
1317+
50
USD 0
TK10Q60WS1VQ TOSHIBA
TOSHIBA
11020
USD 0
TK10Q60WS1VQ TOSHIBA 2022
TOSHIBA
2022
11020
USD 0
TK10Q60W,S1VQ Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
18000
USD 0
TK10Q60WS1VQ TOSHIBA 1317+
TOSHIBA
1317+
50
USD 0
| 
