| 元件型号: | TK22E10N1S1X |
| 产品名称: | TK22E10N1S1X Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | TK22E10N1S1X |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Toshiba Semiconductor and Storage |
| 描述: | MOSFET N CH 100V 52A TO220 |
| 系列: | U-MOSVIII-H |
| 包装: | Tube |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 100V |
| 电流 - 连续漏极 (Id) @ 25°C: | 52A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | 10V |
| Vgs(th)（最大值）@Id: | 4V @ 300µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 28nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 1800pF @ 50V |
| Vgs（最大）: | ±20V |
| 场效应管特性: | - |
| 功耗（最大）: | 72W (Tc) |
| Rds On（最大）@Id、Vgs: | 13.8 mOhm @ 11A, 10V |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220 |
| 包装/箱: | TO-220-3 |
元件型号
品牌
生产日期
数量
TK22E10N1S1X TOSHIBA
TOSHIBA
11151
USD 0
TK22E10N1,S1X TOSHIBA/
TOSHIBA/
10080
USD 0
TK22E10N1S1X TOSHIBA 2022
TOSHIBA
2022
11150
USD 0
TK22E10N1,S1X TOSHIBA/ 2022
TOSHIBA/
2022
11080
USD 0
TK22E10N1S1X TOSHIBA 20+
TOSHIBA
20+
6051
USD 0
TK22E10N1S1X TOSHIBA
TOSHIBA
11151
USD 0
TK22E10N1,S1X TOSHIBA/
TOSHIBA/
10080
USD 0
TK22E10N1S1X TOSHIBA 2022
TOSHIBA
2022
11150
USD 0
TK22E10N1,S1X TOSHIBA/ 2022
TOSHIBA/
2022
11080
USD 0
TK22E10N1S1X TOSHIBA 20+
TOSHIBA
20+
6051
USD 0
| 
