| 元件型号: | SI4833BDYT1GE3 |
| 产品名称: | SI4833BDYT1GE3 Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | SI4833BDYT1GE3 |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Vishay Siliconix |
| 描述: | MOSFET P-CH 30V W/S 8-SOIC |
| 系列: | * |
| 包装: | - |
| 场效应管类型: | - |
| 技术: | - |
| 漏源电压 (Vdss): | - |
| 电流 - 连续漏极 (Id) @ 25°C: | - |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | - |
| 栅极电荷 (Qg)（最大值）@Vgs: | - |
| 输入电容 (Ciss)（最大值）@Vds: | - |
| Vgs（最大）: | - |
| 场效应管特性: | - |
| 功耗（最大）: | - |
| Rds On（最大）@Id、Vgs: | - |
| 工作温度: | - |
| 安装类型: | - |
| 供应商设备包: | - |
| 包装/箱: | - |
元件型号
品牌
生产日期
数量
SI4833BDY-T1-GE3 VISHAY/
VISHAY/
81830
USD 0
SI4833BDY-T1-GE3 Vishay 22+
Vishay
22+
35800
USD 0
SI4833BDY-T1-GE3 VISHAY 19+
VISHAY
19+
27500
USD 0
SI4833BDY-T1-GE3
Vishay
Vishay
13750
USD 0
SI4833BDY-T1-GE3 Silicon labsIX (VISHAYHAY) 21+
Silicon labsIX (VISHAYHAY)
21+
16000
USD 0
SI4833BDY-T1-GE3 VISHAY/
VISHAY/
81830
USD 0
SI4833BDY-T1-GE3 Vishay 22+
Vishay
22+
35800
USD 0
SI4833BDY-T1-GE3 VISHAY 19+
VISHAY
19+
27500
USD 0
SI4833BDY-T1-GE3
Vishay
Vishay
13750
USD 0
SI4833BDY-T1-GE3 Silicon labsIX (VISHAYHAY) 21+
Silicon labsIX (VISHAYHAY)
21+
16000
USD 0
| 
