| 元件型号: | SPD08P06P |
| 产品名称: | SPD08P06P Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | SPD08P06P |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Infineon Technologies |
| 描述: | MOSFET P-CH 60V 8.83A DPAK |
| 系列: | SIPMOS |
| 包装: | Tape & Reel (TR) |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 60V |
| 电流 - 连续漏极 (Id) @ 25°C: | 8.83A (Ta) |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 4V @ 250µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 13nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 420pF @ 25V |
| Vgs（最大）: | - |
| 场效应管特性: | - |
| 功耗（最大）: | 42W (Tc) |
| Rds On（最大）@Id、Vgs: | 300 mOhm @ 6.2A, 10V |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO252-3 |
| 包装/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
元件型号
品牌
生产日期
数量
SPD08P06P** INFINEON/
INFINEON/
38860
USD 0
SPD08P06P G VBSEMI/
VBSEMI/
21449
USD 0
SPD08P06P INFINEON/
INFINEON/
13200
USD 0
SPD08P06P Infineon 21+
Infineon
21+
30000
USD 0
SPD08P06P G VBSEMI/ 2022
VBSEMI/
2022
21007
USD 0
SPD08P06P** INFINEON/
INFINEON/
38860
USD 0
SPD08P06P G VBSEMI/
VBSEMI/
21449
USD 0
SPD08P06P INFINEON/
INFINEON/
13200
USD 0
SPD08P06P Infineon 21+
Infineon
21+
30000
USD 0
SPD08P06P G VBSEMI/ 2022
VBSEMI/
2022
21007
USD 0
| 
