| 元件型号: | SPD30N03S2L10 |
| 产品名称: | SPD30N03S2L10 Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | SPD30N03S2L10 |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Infineon Technologies |
| 描述: | MOSFET N-CH 30V 30A DPAK |
| 系列: | OptiMOS |
| 包装: | Cut Tape (CT) |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 30V |
| 电流 - 连续漏极 (Id) @ 25°C: | 30A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 2V @ 50µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 41.8nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 1550pF @ 25V |
| Vgs（最大）: | - |
| 场效应管特性: | - |
| 功耗（最大）: | 100W (Tc) |
| Rds On（最大）@Id、Vgs: | 10 mOhm @ 30A, 10V |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PG-TO252-3 |
| 包装/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
元件型号
品牌
生产日期
数量
SPD30N03S2L-10 G VBSEMI/
VBSEMI/
33526
USD 0
SPD30N03S2L-10 INFINEON/
INFINEON/
10080
USD 0
SPD30N03S2L-10 INFINEON 07+
INFINEON
07+
20000
USD 0
SPD30N03S2L-10 G VBSEMI/ 2022
VBSEMI/
2022
21026
USD 0
SPD30N03S2L-10 INFINEON/ 2022
INFINEON/
2022
26846
USD 0
SPD30N03S2L-10 G VBSEMI/
VBSEMI/
33526
USD 0
SPD30N03S2L-10 INFINEON/
INFINEON/
10080
USD 0
SPD30N03S2L-10 INFINEON 07+
INFINEON
07+
20000
USD 0
SPD30N03S2L-10 G VBSEMI/ 2022
VBSEMI/
2022
21026
USD 0
SPD30N03S2L-10 INFINEON/ 2022
INFINEON/
2022
26846
USD 0
| 
