| 元件型号: | SIS435DNTT1GE3 |
| 产品名称: | SIS435DNTT1GE3 Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | SIS435DNTT1GE3 |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Vishay Siliconix |
| 描述: | MOSFET P-CH 20V 30A 1212-8 |
| 系列: | TrenchFET |
| 包装: | Cut Tape (CT) |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 20V |
| 电流 - 连续漏极 (Id) @ 25°C: | 30A (Tc) |
| 驱动电压（最大导通电阻、最小导通电阻）: | 1.8V, 4.5V |
| Vgs(th)（最大值）@Id: | 900mV @ 250µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 180nC @ 8V |
| 输入电容 (Ciss)（最大值）@Vds: | 5700pF @ 10V |
| Vgs（最大）: | ±8V |
| 场效应管特性: | - |
| 功耗（最大）: | 3.7W (Ta), 39W (Tc) |
| Rds On（最大）@Id、Vgs: | 5.4 mOhm @ 13A, 4.5V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | PowerPAK 1212-8 |
| 包装/箱: | PowerPAK 1212-8 |
元件型号
品牌
生产日期
数量
SIS435DNT-T1-GE3 VISHAY
VISHAY
68666
USD 0
SIS435DNT-T1-GE3 ORIGINAL 22+
ORIGINAL
22+
5250
USD 0
SIS435DNT-T1-GE3 Vishay Siliconix 23+
Vishay Siliconix
23+
16660
USD 0
SIS435DNT-T1-GE3 Vishay 22+
Vishay
22+
35800
USD 0
SIS435DNT-T1-GE3 VISHAY 22+
VISHAY
22+
16890
USD 0
SIS435DNT-T1-GE3 VISHAY
VISHAY
68666
USD 0
SIS435DNT-T1-GE3 ORIGINAL 22+
ORIGINAL
22+
5250
USD 0
SIS435DNT-T1-GE3 Vishay Siliconix 23+
Vishay Siliconix
23+
16660
USD 0
SIS435DNT-T1-GE3 Vishay 22+
Vishay
22+
35800
USD 0
SIS435DNT-T1-GE3 VISHAY 22+
VISHAY
22+
16890
USD 0
| 
