| 元件型号: | SI2341DST1GE3 |
| 产品名称: | SI2341DST1GE3 Transistors - FETs, MOSFETs - Single |
| 商户特定标识符: | SI2341DST1GE3 |
| 类别: | Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single |
| 品牌: | Vishay Siliconix |
| 描述: | MOSFET P-CH 30V 2.5A SOT-23 |
| 系列: | TrenchFET |
| 包装: | Tape & Reel (TR) |
| 场效应管类型: | P-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (Vdss): | 30V |
| 电流 - 连续漏极 (Id) @ 25°C: | 2.5A (Ta) |
| 驱动电压（最大导通电阻、最小导通电阻）: | - |
| Vgs(th)（最大值）@Id: | 3V @ 250µA |
| 栅极电荷 (Qg)（最大值）@Vgs: | 15nC @ 10V |
| 输入电容 (Ciss)（最大值）@Vds: | 400pF @ 15V |
| Vgs（最大）: | - |
| 场效应管特性: | - |
| 功耗（最大）: | 710mW (Ta) |
| Rds On（最大）@Id、Vgs: | 72 mOhm @ 2.8A, 10V |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-23-3 (TO-236) |
| 包装/箱: | TO-236-3, SC-59, SOT-23-3 |
元件型号
品牌
生产日期
数量
Si2341DS-T1-GE3 VISHAY/ 22+
VISHAY/
22+
27440
USD 0
Si2341DS-T1-GE3 VISHAY/ 2022
VISHAY/
2022
26320
USD 0
Si2341DS-T1-GE3 VISHAY 21+
VISHAY
21+
15320
USD 0
SI2341DS-T1-GE3 VISHAY 19+
VISHAY
19+
36200
USD 0
SI2341DS-T1-GE3 Vishay Siliconix
Vishay Siliconix
1000
USD 0
Si2341DS-T1-GE3 VISHAY/ 22+
VISHAY/
22+
27440
USD 0
Si2341DS-T1-GE3 VISHAY/ 2022
VISHAY/
2022
26320
USD 0
Si2341DS-T1-GE3 VISHAY 21+
VISHAY
21+
15320
USD 0
SI2341DS-T1-GE3 VISHAY 19+
VISHAY
19+
36200
USD 0
SI2341DS-T1-GE3 Vishay Siliconix
Vishay Siliconix
1000
USD 0
| 
